发明名称 FLASH MULTIPLE-PASS WRITE WITH ACCURATE FIRST-PASS WRITE
摘要 An indication to store a data value in Flash memory is received. An accurate coarse write is performed on the Flash memory, including by: storing a first voltage level in the Flash memory and setting a configuration setting of the Flash memory to a first setting. The first voltage level, when interpreted using the configuration setting at the first setting, corresponds to the data value. A fine write is performed on the Flash memory, including by: storing a second voltage level in the Flash memory and setting the configuration setting of the Flash memory to a second setting. The second voltage level, when interpreted using the configuration setting at the second setting, corresponds to the data value.
申请公布号 US2014219033(A1) 申请公布日期 2014.08.07
申请号 US201414169826 申请日期 2014.01.31
申请人 SK hynix memory solutions inc. 发明人 Lee Meng-Kun;Wu Yingquan
分类号 G11C16/10 主分类号 G11C16/10
代理机构 代理人
主权项 1. A system, comprising: a Flash controller configured to: receive an indication to store a data value in a Flash memory;perform an accurate coarse write on the Flash memory, including by: storing a first voltage level in the Flash memory; andsetting a configuration setting of the Flash memory to a first setting, wherein the first voltage level, when interpreted using the configuration setting at the first setting, corresponds to the data value; andperform a fine write on the Flash memory, including by: storing a second voltage level in the Flash memory; andsetting the configuration setting of the Flash memory to a second setting, wherein the second voltage level, when interpreted using the configuration setting at the second setting, corresponds to the data value; and is the Flash memory.
地址 San Jose CA US