发明名称 |
FLASH MULTIPLE-PASS WRITE WITH ACCURATE FIRST-PASS WRITE |
摘要 |
An indication to store a data value in Flash memory is received. An accurate coarse write is performed on the Flash memory, including by: storing a first voltage level in the Flash memory and setting a configuration setting of the Flash memory to a first setting. The first voltage level, when interpreted using the configuration setting at the first setting, corresponds to the data value. A fine write is performed on the Flash memory, including by: storing a second voltage level in the Flash memory and setting the configuration setting of the Flash memory to a second setting. The second voltage level, when interpreted using the configuration setting at the second setting, corresponds to the data value. |
申请公布号 |
US2014219033(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201414169826 |
申请日期 |
2014.01.31 |
申请人 |
SK hynix memory solutions inc. |
发明人 |
Lee Meng-Kun;Wu Yingquan |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. A system, comprising:
a Flash controller configured to:
receive an indication to store a data value in a Flash memory;perform an accurate coarse write on the Flash memory, including by:
storing a first voltage level in the Flash memory; andsetting a configuration setting of the Flash memory to a first setting, wherein the first voltage level, when interpreted using the configuration setting at the first setting, corresponds to the data value; andperform a fine write on the Flash memory, including by:
storing a second voltage level in the Flash memory; andsetting the configuration setting of the Flash memory to a second setting, wherein the second voltage level, when interpreted using the configuration setting at the second setting, corresponds to the data value; and is the Flash memory. |
地址 |
San Jose CA US |