发明名称 |
METHOD FOR MANUFACTURING NANO-STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
Provided is a method for manufacturing a nano-structured semiconductor light-emitting element, the method according to one aspect of the present invention comprising the steps of: forming, on a base layer, a mask having a plurality of openings; forming a plurality of nano-cores by growing first conductive semiconductors in the exposed areas of the base layer so as to fill the plurality of the openings thereon; removing the mask partially so that the sides of the plurality of nano-cores are exposed; heat-treating the plurality of nano-cores after the mask is partially removed; after the heat treatment, forming a plurality of nano light-emitting structures by growing, sequentially, an activation layer and a second conductive semiconductor layer on the surface of the plurality of nano-cores; and leveling the upper ends of the plurality of nano light-emitting structures so that the upper surfaces of the nano-cores are exposed. |
申请公布号 |
WO2014119909(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
WO2014KR00810 |
申请日期 |
2014.01.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHA, NAM-GOO;KIM, DONG-HO;YOO, GEON-WOOK |
分类号 |
H01L33/04;H01L33/08;H01L33/20 |
主分类号 |
H01L33/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|