发明名称 METHOD FOR MANUFACTURING NANO-STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 Provided is a method for manufacturing a nano-structured semiconductor light-emitting element, the method according to one aspect of the present invention comprising the steps of: forming, on a base layer, a mask having a plurality of openings; forming a plurality of nano-cores by growing first conductive semiconductors in the exposed areas of the base layer so as to fill the plurality of the openings thereon; removing the mask partially so that the sides of the plurality of nano-cores are exposed; heat-treating the plurality of nano-cores after the mask is partially removed; after the heat treatment, forming a plurality of nano light-emitting structures by growing, sequentially, an activation layer and a second conductive semiconductor layer on the surface of the plurality of nano-cores; and leveling the upper ends of the plurality of nano light-emitting structures so that the upper surfaces of the nano-cores are exposed.
申请公布号 WO2014119909(A1) 申请公布日期 2014.08.07
申请号 WO2014KR00810 申请日期 2014.01.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHA, NAM-GOO;KIM, DONG-HO;YOO, GEON-WOOK
分类号 H01L33/04;H01L33/08;H01L33/20 主分类号 H01L33/04
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