发明名称 METHOD OF PRODUCING CIGS FILM, AND METHOD OF PRODUCING CIGS SOLAR CELL BY USING SAME
摘要 A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.
申请公布号 US2014220729(A1) 申请公布日期 2014.08.07
申请号 US201214241007 申请日期 2012.09.05
申请人 Nishii Hiroto;Morita Shigenori;Teraji Seiki;Hosokawa Kazuhito;Minemoto Takashi 发明人 Nishii Hiroto;Morita Shigenori;Teraji Seiki;Hosokawa Kazuhito;Minemoto Takashi
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method for producing a CIGS film to be used as a light absorbing layer for a CIGS solar cell, the method comprising: stacking a layer (A) comprising indium, gallium and selenium and a layer (B) comprising copper and selenium in a solid phase in this order over a substrate; and heating a stacked structure including the layer (A) and the layer (B) to melt the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth, thereby providing the CIGS film, wherein the CIGS film obtained at completion of the heating has a molar ratio satisfying 0.95<copper/(indium+gallium)<1.30, wherein while the temperature for the heating is maintained, indium, gallium and selenium are further deposited through evaporation on the CIGS film obtained by the heating, to allow the CIGS film to have a molar ratio satisfying 0.70<copper/(indium+gallium)<0.95.
地址 Ibaraki-shi JP