发明名称 |
METHOD AND DEVICE FOR HIGH THROUGHPUT CRYSTAL STRUCTURE ANALYSIS BY ELECTRON DIFFRACTION |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and a device for crystal structure analysis by electron diffraction.SOLUTION: A method and a device for electron diffraction tomography of a crystal sample comprises the steps of: acquiring a series of electron diffraction patterns, in combination with a beam scanning protocol so that a beam converges at every discrete location 42 and 43 of a sample 38, by using scanning of the electron beam over a plurality of discrete locations of the sample; and acquiring a common intensity scaling factor, by using template matching to determine crystal orientations and thickness maps.</p> |
申请公布号 |
JP2014142357(A) |
申请公布日期 |
2014.08.07 |
申请号 |
JP20140065931 |
申请日期 |
2014.03.27 |
申请人 |
NANOMEGAS SPRL;INSTITUT POLYTECHNIQUE DE GRENOBLE;CENTRE NATL DE LA RECHERCHE SCIENTIFIQUE |
发明人 |
STAVROS NICOLOPOULOS;DANIEL BULTREYS;EDGARD RAUCH |
分类号 |
G01N23/225;H01J37/22;H01J37/28 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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