DIGITAL SILICON PHOTOMULTIPLIER DETECTOR CELL

摘要

Provided are a silicon photomultiplier detector cell and a manufacturing method thereof. The silicon photomultiplier detector cell includes a light diode region and a readout circuit region which are formed on the same substrate. The light diode region includes a first semiconductor layer which is doped with a first type impurity and is exposed on the surface of the silicon photomultiplier detector, a second semiconductor layer which is doped with a second type impurity, and a first epi layer which is arranged between the first and the second semiconductor layer to touch the first and the second semiconductor layer, respectively, and is doped with the first type impurity which has a lower concentration compared to the first semiconductor layer.