Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device

摘要

A substrate with a thin film, comprising: a substrate composed of silicon carbide and having a main surface having a diameter of 2 inches or greater; and a thin film composed of silicon carbide and formed on one said main surface, and a value for bow at said main surface being not smaller than -40 µm and not greater than 0 µm, and a value for warp at said main surface being not smaller than 0 µm and not greater than 40 µm.