SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device according to an embodiment of the present invention comprises a P-type semiconductor substrate with an integrated circuit on at least one surface; one or more through electrodes inserted into the semiconductor substrate; a dielectric layer formed between the semiconductor substrate and the through electrodes; an N-type impurity region in contact with one portion of the dielectric layer, formed within the semiconductor substrate to expose the other part of the dielectric layer, and providing electrons to form an inversion layer on the surface of the semiconductor substrate facing the exposed part of the dielectric layer; and a power circuit providing bias voltage or ground by being electrically connected to the impurity region to be coupled to an electrical signal passing through the through electrodes and form the inversion layer.