| 摘要 |
A wire structure of a semiconductor device and a method for forming the same are provided. The wire structure of a semiconductor device comprises: a lower film having a lower wire; an interlayer insulating film having a contact hole exposing one part of the lower wire, and a trench extended along a first direction and connected with the contact hole; a contact plug filled in the contact hole of the interlayer insulating film; and an upper wire in the trench of the interlayer insulating film, which is connected with the contact plug, wherein the contact plug has a lower side wall having a first slope against the lower film in a first direction, and an upper side wall having a second slope against the lower film. The second slope may be smaller than the first slope. |
