发明名称 |
MOSFET HAVING 3D-STRUCTURE AND MANUFACTURING METHOD FOR SAME |
摘要 |
<p>There is provided a semiconductor device with basic electronic elements in a three-dimensional structure. The semiconductor device has a source region and a drain region each of which includes an electrode and a silicide region, and is formed with a plurality of different crystal planes. The silicide regions on different crystal planes of the source region and the drain region have different thicknesses.</p> |
申请公布号 |
KR20140097569(A) |
申请公布日期 |
2014.08.06 |
申请号 |
KR20147019288 |
申请日期 |
2012.07.09 |
申请人 |
TOHOKU UNIVERSITY |
发明人 |
SUWA TOMOYUKI;TANAKA HIROAKI;OHMI TADAHIRO |
分类号 |
H01L29/78;H01L21/336;H01L29/786 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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