发明名称 Reverse conductive nano array and manufacturing method of the same
摘要 A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer.
申请公布号 US8796749(B2) 申请公布日期 2014.08.05
申请号 US201213586435 申请日期 2012.08.15
申请人 发明人 Liao Shirong;Ye Jinlin;Liao Bo;Dong Jie
分类号 H01L31/0236 主分类号 H01L31/0236
代理机构 Law Office of Michael Chen 代理人 Chen Che-Yang;Law Office of Michael Chen
主权项 1. A photodiode comprising: a diode structure including a substrate, and a light-absorbing layer; and a light-directing layer including a plurality of polygon projections that is deposited on a top surface of the diode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the diode structure, wherein the polygon projections include a plurality of triangular and sub-triangular projections, and said sub-triangular projections are patterned on both sides of each triangular projection.
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