发明名称 |
Reverse conductive nano array and manufacturing method of the same |
摘要 |
A high-speed photodiode may include a photodiode structure having a substrate, a light-absorbing layer and a light-directing layer that is deposited on a top surface of the photodiode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the photodiode structure. In one embodiment, the light-directing layer may include a plurality of polygon such as triangular projections to refract the incident light to increase the light path thereof when entering the photodiode structure. In another embodiment, a plurality of nanoscaled sub-triangular projections can patterned on both sides of each triangular projection to more effectively increase the light paths. In a further embodiment, porous materials can be used to form the light-directing layer. |
申请公布号 |
US8796749(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201213586435 |
申请日期 |
2012.08.15 |
申请人 |
|
发明人 |
Liao Shirong;Ye Jinlin;Liao Bo;Dong Jie |
分类号 |
H01L31/0236 |
主分类号 |
H01L31/0236 |
代理机构 |
Law Office of Michael Chen |
代理人 |
Chen Che-Yang;Law Office of Michael Chen |
主权项 |
1. A photodiode comprising:
a diode structure including a substrate, and a light-absorbing layer; and a light-directing layer including a plurality of polygon projections that is deposited on a top surface of the diode structure and patterned to form a textured surface used to change the angle of incident light to increase a light path of the incident light when entering the diode structure, wherein the polygon projections include a plurality of triangular and sub-triangular projections, and said sub-triangular projections are patterned on both sides of each triangular projection. |
地址 |
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