Electronic device covered by multiple layers and method for manufacturing electronic device

摘要

An electronic device according to the invention includes: a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has a first covering layer covering from above the cavity and having a through-hole in communication with the cavity and a second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has a first region located above at least the MEMS structure and a second region located around the first region, the first covering layer is thinner in the first region than in the second region, and a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region.

主权项

1. An electronic device comprising:
a substrate; an MEMS structure formed above the substrate; and a covering structure defining a cavity in which the MEMS structure is arranged, wherein the covering structure has
a first covering layer covering from above the cavity and having a through-hole in communication with the cavity, anda second covering layer formed above the first covering layer and closing the through-hole, the first covering layer has, in a plan view from a thickness direction of the substrate,
a first region located above at least the MEMS structure, anda second region located around the first region, the first covering layer is thinner in the first region than in the second region, a distance between the substrate and the first covering layer in the first region is longer than a distance between the substrate and the first covering layer in the second region, the through-hole is formed in the first region between the MEMS structure and the second region in the plan view, the second covering layer is formed above the first covering layer located above the MEMS structure, and a first thickness of the second covering layer that is formed in and above the through-hole is the same as a second thickness that is obtained by combining thicknesses of the first and second covering layers located above the MEMS structure.