发明名称 |
Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
摘要 |
Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin which contains (c) a repeating unit having at least one polarity conversion group and has at least either a fluorine atom or a silicon atom. |
申请公布号 |
US8795944(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US200913139193 |
申请日期 |
2009.12.11 |
申请人 |
FUJIFILM Corporation |
发明人 |
Saegusa Hiroshi;Iwato Kaoru;Hirano Shuji;Iizuka Yusuke |
分类号 |
G03F7/004;G03F7/028;G03F7/039;G03F7/26 |
主分类号 |
G03F7/004 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
(A) a resin capable of increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a resin which contains (c) a repeating unit having at least one polarity conversion group and has at least either a fluorine atom or a silicon atom, wherein the repeating unit (c) has at least either a fluorine atom or a silicon atom; and wherein: (i) the repeating unit (c) is (c′) repeating unit having a fluorine atom and a polarity conversion group on one side chain; (ii) the resin (A) contains no fluorine atom and no silicon atom; and (iii) the amount of the resin (A) is 70 to 98 mass% based on the entire solids content of the resin composition. |
地址 |
Tokyo JP |