发明名称 Metal bump joint structure
摘要 A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.
申请公布号 US8796849(B2) 申请公布日期 2014.08.05
申请号 US201213656968 申请日期 2012.10.22
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Jing-Cheng
分类号 H01L23/48;H01L23/52 主分类号 H01L23/48
代理机构 Slater and Matsil, L.L.P. 代理人 Slater and Matsil, L.L.P.
主权项 1. A structure comprising: a first semiconductor component having: a first metal bump comprising a first material and formed on a surface of the first semiconductor component; anda first barrier layer comprising a second material different from the first material and formed on the first metal bump; a second semiconductor component having: a second metal bump comprising a third material and formed on a surface of the second semiconductor component; anda second barrier layer comprising a fourth material different from the third material and formed on the second metal bump; and a solder joint structure electrically connecting the first metal bump and the second metal bump, wherein the solder joint structure comprises: an intermetallic compound region formed between the first barrier layer and the second barrier layer, the intermetallic compound region comprising a compound comprising at least one element of the second material and/or the fourth material and at least one element of a solder material, wherein the intermetallic compound region has a vertical dimension from the first barrier layer to the second barrier layer; anda surrounding portion comprising the solder material and formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion has a lateral dimension from a point aligned with at least one of respective walls of the first barrier layer and the second barrier layer to a nearest exterior surface of the surrounding portion, and wherein the lateral dimension is greater than the vertical dimension.
地址 Hsin-Chu TW