Cell operation monitoring

摘要

Memory devices adapted to process and generate analog data signals representative of data values of two or more bits of information facilitate increases in data transfer rates relative to devices processing and generating only binary data signals indicative of individual bits. Programming of such memory devices includes programming to a target threshold voltage range representative of the desired bit pattern. Reading such memory devices includes generating an analog data signal indicative of a threshold voltage of a target memory cell. Atypical cell, block, string, column, row, etc. . . . operation is monitored and locations and type of atypical operation stored. Adjustment of operation is performed based upon the atypical cell operation.

主权项

1. A memory device, comprising:
an array of memory cells; and a controller configured to store in a storage area identification information and an indication of a type of atypical operation for a cell in the memory having atypical operation, and to adjust operation of the atypical cell using the identification information and the type; wherein the memory device adjusts operation by sensing the cell with a different sensing algorithm when the type of atypical operation is an atypical sensing, and adjusts operation by programming the cell with a different programming operation when the type of atypical operation is an atypical programming.