Printed non-volatile memory

摘要

A nonvolatile memory cell is disclosed, having first and second semiconductor islands at the same horizontal level and spaced a predetermined distance apart, the first semiconductor island providing a control gate and the second semiconductor island providing source and drain terminals; a gate dielectric layer on at least part of the first semiconductor island; a tunneling dielectric layer on at least part of the second semiconductor island; a floating gate on at least part of the gate dielectric layer and the tunneling dielectric layer; and a metal layer in electrical contact with the control gate and the source and drain terminals. In one advantageous embodiment, the nonvolatile memory cell may be manufactured using an “all-printed” process technology.

主权项

1. A non-volatile memory cell, comprising:
a) first and second semiconductor islands at a same horizontal level on a substrate and spaced a predetermined distance apart, the first semiconductor island comprising a control gate of said non-volatile memory cell and the second semiconductor island comprising source and drain terminals of said non-volatile memory cell; b) a gate dielectric layer on at least part of said first semiconductor island; c) a tunneling dielectric layer on at least part of said second semiconductor island; d) a floating gate on at least part of said gate dielectric layer and said tunneling dielectric layer; and e) a metal layer in electrical contact with said control gate and said source and drain terminals.