发明名称 MEMS switch with reduced dielectric charging effect
摘要 The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.
申请公布号 US8797127(B2) 申请公布日期 2014.08.05
申请号 US201012951492 申请日期 2010.11.22
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chu Chia-Hua;Lin Chung-Hsien;Cheng Chun-Wen
分类号 H01H51/22 主分类号 H01H51/22
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A micro-electro-mechanical systems (MEMS) switch, comprising: a substrate; a first dielectric layer disposed above the substrate; a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer; a second dielectric layer enclosing the bottom signal electrode; and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump, and at least one support member that comprises the first dielectric layer and is directly below the top actuation electrode.
地址 Hsin-Chu TW