发明名称 |
Circuit unit, bias circuit with circuit unit and differential amplifier circuit with first and second circuit unit |
摘要 |
Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector (C) or an emitter (E) of the heterojunction bipolar transistor. |
申请公布号 |
US8797100(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201013582132 |
申请日期 |
2010.03.05 |
申请人 |
Epcos AG |
发明人 |
Balm Bart;Bouwman Jeroen;van den Oever Léon C. M. |
分类号 |
H03F3/16;H03F3/45 |
主分类号 |
H03F3/16 |
代理机构 |
Nixon Peabody LLP |
代理人 |
Nixon Peabody LLP |
主权项 |
1. Bias circuit with a circuit unit, the circuit unit comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor, wherein either a source or a drain of the long-gate pseudomorphic high-electron-mobility transistor is electrically coupled with either a collector or emitter of the heterojunction bipolar transistor, with the heterojunction bipolar transistor of the circuit unit being a sixth control element and with the long-gate pseudomorphic high-electron-mobility transistor of the circuit unit being a seventh control element, and with a fifth control element comprising another heterojunction bipolar transistor, whereas a base and the collector of the sixth control element are electrically shorted and a base of the fifth control element is electrically coupled to the base of the sixth control element. |
地址 |
Munich DE |