Semiconductor device

摘要

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

主权项

1. A semiconductor device, comprising:
a semiconductor chip having a main surface over which a first electrode pad and a second electrode pad are formed, a first side, and a second side opposite the first side; a metal-made support board having a top surface over which the semiconductor chip is disposed; a first lead electrically connected to the first electrode pad of the semiconductor chip; a first metal conductor electrically connected to the first electrode pad of the semiconductor chip and the first lead; and a sealing body sealing the semiconductor chip, a part of the first lead, and the first metal conductor, wherein the semiconductor chip has a substantially quadrangular shape, the first and second sides of the semiconductor chip extend in a first direction, and the first lead extends in a second direction that intersects the first direction in plan view, wherein, in plan view, the second side of the semiconductor chip is closer to the first lead than the first side thereof, and the second electrode pad is disposed at a corner portion of the semiconductor chip that is more proximate to the first side than the second side in plan view and thereby the second electrode pad is located more proximate to the first side than the second side, wherein the first metal conductor has a first portion, a second portion, and a third portion, wherein the first and second portions of the first metal conductor are electrically bonded to the first electrode pad, wherein the third portion of the first metal conductor is disposed between and electrically connected to the first and second portions, and wherein a first interspace is formed between the third portion of the first metal conductor and the first electrode pad of the semiconductor chip.