发明名称 Hybrid interconnect structure for performance improvement and reliability enhancement
摘要 A hybrid interconnect structure (of the single or dual damascene type) is provided in which a dense (i.e., non-porous) dielectric spacer is present on the sidewalls of a dielectric material. More specifically, the structure includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive material is laterally spaced apart from the dielectric material by a diffusion barrier, a dense dielectric spacer and, optionally, an air gap. The presence of the dense dielectric spacer results in a hybrid interconnect structure that has improved reliability and performance. Moreover, the hybrid interconnect structure provides for better process control which leads to the potential for high volume manufacturing.
申请公布号 US8796854(B2) 申请公布日期 2014.08.05
申请号 US201313838956 申请日期 2013.03.15
申请人 International Business Machines Corporation 发明人 Yang Chih-Chao;Shaw Thomas M.;Wong Keith Kwong Hon;Yang Haining S.
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Scully, Scott, Murphy & Presser, P.C. 代理人 Scully, Scott, Murphy & Presser, P.C. ;Percello Louis J.
主权项 1. An interconnect structure comprising: a dielectric material of unitary composition and having at least one opening therein; a dense dielectric spacer having a taper and located partially within the at least one opening and in direct contact with a first sidewall portion of the dielectric material of unitary composition; a diffusion barrier located within the at least one opening, wherein a first surface of the diffusion barrier directly contacts a surface of the dense dielectric spacer and wherein a second surface of the diffusion barrier directly contacts a second sidewall portion of the dielectric material of unitary composition; and a conductive material located on said diffusion barrier.
地址 Armonk NY US