发明名称 |
Hybrid interconnect structure for performance improvement and reliability enhancement |
摘要 |
A hybrid interconnect structure (of the single or dual damascene type) is provided in which a dense (i.e., non-porous) dielectric spacer is present on the sidewalls of a dielectric material. More specifically, the structure includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive material is laterally spaced apart from the dielectric material by a diffusion barrier, a dense dielectric spacer and, optionally, an air gap. The presence of the dense dielectric spacer results in a hybrid interconnect structure that has improved reliability and performance. Moreover, the hybrid interconnect structure provides for better process control which leads to the potential for high volume manufacturing. |
申请公布号 |
US8796854(B2) |
申请公布日期 |
2014.08.05 |
申请号 |
US201313838956 |
申请日期 |
2013.03.15 |
申请人 |
International Business Machines Corporation |
发明人 |
Yang Chih-Chao;Shaw Thomas M.;Wong Keith Kwong Hon;Yang Haining S. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
Scully, Scott, Murphy & Presser, P.C. |
代理人 |
Scully, Scott, Murphy & Presser, P.C. ;Percello Louis J. |
主权项 |
1. An interconnect structure comprising:
a dielectric material of unitary composition and having at least one opening therein; a dense dielectric spacer having a taper and located partially within the at least one opening and in direct contact with a first sidewall portion of the dielectric material of unitary composition; a diffusion barrier located within the at least one opening, wherein a first surface of the diffusion barrier directly contacts a surface of the dense dielectric spacer and wherein a second surface of the diffusion barrier directly contacts a second sidewall portion of the dielectric material of unitary composition; and a conductive material located on said diffusion barrier. |
地址 |
Armonk NY US |