MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The present invention provides a method of manufacturing a semiconductor device having a memory cell of high reliability. After the first and the second stack structure (PE1, PE2) of a memory cell formation region has a height which is higher than that of the third stack structure (PE3) of a peripheral transistor formation region, an interlayer dielectric layer (II) is formed to cover them. A polishing process is carried out.