SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

The present invention relates to a semiconductor light emitting device and a manufacturing method for the same. The semiconductor light emitting device comprises: a substrate; a first conductive semiconductor base layer formed on the substrate; and nano-light emitting structures including first conductive semiconductor cores which are formed to be spaced apart from each other in the first conductive semiconductor base layer, and an active layer and a second conductive semiconductor layer which are sequentially formed on a surface of the first conductive semiconductor core, wherein a portion of the second conductive semiconductor layer formed on a side surface of the nano-light emitting structures comprises a different crystal face from the side surface of the first conductive semiconductor core, thereby improving the light extraction efficiency of the semiconductor light emitting device.