| 摘要 |
The composite material comprises a polymeric matrix, and thermoelectric loads dispersed in a form of particles within the polymeric matrix. The composite material is free of metal particles. The thermoelectric loads are multicomponent semiconductor alloys of p type or n type including elements of bismuth and tellurium. The polymeric matrix comprises polystyrene, PVC, polyethylene, polyvinylidene fluoride, poly(methylmethacrylate), poly vinyl acetate, polyimide, polypropylene and copolymer. The semiconductor alloys of p or n type include a dopant element. The composite material comprises a polymeric matrix, and thermoelectric loads dispersed in a form of particles within the polymeric matrix. The composite material is free of metal particles. The thermoelectric loads are multicomponent semiconductor alloys of p type or n type including elements of bismuth and tellurium. The polymeric matrix comprises polystyrene, PVC, polyethylene, polyvinylidene fluoride, poly(methylmethacrylate), poly vinyl acetate, polyimide, polypropylene and copolymer. The semiconductor alloys of p or n type include a dopant element. A diameter of the particles of the thermoelectric loads is 50 nm to 500 mu m. A volume percentage of the particles of thermoelectric loads is 10-99% of total volume of the composite material. The composite material has a figure of merit of higher than 0.1. An independent claim is included for a method for obtaining a thermoelectric hybrid composite material. |
