FORMING STRUCTURES ON RESISTIVE SUBSTRATES

摘要

A substrate includes a first region having a first resistivity, for optimizing a field effect transistor, a second region having a second resistivity, for optimizing an npn subcollector of a bipolar transistor device and triple well, a third region having a third resistivity, with a high resistivity for a passive device, a fourth region, substantially without implantation, to provide low perimeter capacitance for devices.

主权项

1. A method for fabricating a substrate, the method comprising:
implanting p-type ions in a first region of the substrate that decrease the resistivity of the first region; implanting n-type ions in a second region of the substrate; implanting argon ions in a third region of the substrate that decrease carrier mobility of the third region of the substrate.