| 发明名称 |
Double Stepped Semiconductor Substrate |
| 摘要 |
A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate. |
| 申请公布号 |
US2014209974(A1) |
申请公布日期 |
2014.07.31 |
| 申请号 |
US201313756412 |
申请日期 |
2013.01.31 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Chen Meng-Ku;Lin Hung-Ta;Chang Huicheng |
| 分类号 |
H01L21/02;H01L29/267 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a double step surface on a semiconductor substrate, the method comprising:
with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate; with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate. |
| 地址 |
Hsin-Chu TW |
