METAL CONTAMINATION EVALUATION METHOD FOR SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD

摘要

One embodiment of the present invention pertains a metal contamination evaluation method for a semiconductor wafer that has undergone a heat treatment. The method includes finding an analysis value by analyzing a plurality of analysis locations on the surface of the semiconductor wafer using a first analysis method in which the greater the level of contamination by an evaluation-target metal element is the smaller the analysis value used for evaluation becomes, or a second analysis method in which the greater the level of contamination by an evaluation-target metal element is the larger the analysis value used for evaluation becomes, and the method determines the presence or absence of local contamination by an evaluation-target metal element by evaluating an analysis value on the basis of a normal value stipulated by a probability distribution function.