发明名称 |
ADAPTIVE INITIAL PROGRAM VOLTAGE FOR NON-VOLATILE MEMORY |
摘要 |
When programming a set of non-volatile storage elements using a multi-stage programming process, a series of programming pulses are used for each stage. The magnitude of the initial program pulse for the current stage being performed is dynamically set as a function of the number of program pulses used for the same stage of the multi-stage programming process when programming non-volatile storage elements connected to on one or more previously programmed word lines. |
申请公布号 |
US2014215128(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201313756387 |
申请日期 |
2013.01.31 |
申请人 |
SANDISK TECHNOLOGIES, INC. |
发明人 |
Chin Henry;Lee Dana |
分类号 |
G11C16/10;G06F12/02 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of programming data into non-volatile storage comprising:
programming non-volatile storage elements connected to a first set of one or more word lines using one or more stages of a multi-stage programming process, the multi-stage programming process includes at least a particular stage and an additional stage; determining a voltage magnitude of an initial program pulse for the particular stage of the multi-stage programming process as a function of number of program pulses applied for the particular stage when the particular stage was used to program the non-volatile storage elements connected to the first set of one or more word lines; and programming non-volatile storage elements connected to a selected word line using the particular stage of the multi-stage programming process with the initial program pulse having the determined voltage magnitude. |
地址 |
Plano TX US |