发明名称 ADAPTIVE INITIAL PROGRAM VOLTAGE FOR NON-VOLATILE MEMORY
摘要 When programming a set of non-volatile storage elements using a multi-stage programming process, a series of programming pulses are used for each stage. The magnitude of the initial program pulse for the current stage being performed is dynamically set as a function of the number of program pulses used for the same stage of the multi-stage programming process when programming non-volatile storage elements connected to on one or more previously programmed word lines.
申请公布号 US2014215128(A1) 申请公布日期 2014.07.31
申请号 US201313756387 申请日期 2013.01.31
申请人 SANDISK TECHNOLOGIES, INC. 发明人 Chin Henry;Lee Dana
分类号 G11C16/10;G06F12/02 主分类号 G11C16/10
代理机构 代理人
主权项 1. A method of programming data into non-volatile storage comprising: programming non-volatile storage elements connected to a first set of one or more word lines using one or more stages of a multi-stage programming process, the multi-stage programming process includes at least a particular stage and an additional stage; determining a voltage magnitude of an initial program pulse for the particular stage of the multi-stage programming process as a function of number of program pulses applied for the particular stage when the particular stage was used to program the non-volatile storage elements connected to the first set of one or more word lines; and programming non-volatile storage elements connected to a selected word line using the particular stage of the multi-stage programming process with the initial program pulse having the determined voltage magnitude.
地址 Plano TX US