| 摘要 |
A power diode is disclosed wherein it is possible to lower on-voltage by expanding a conducting region at an on time. By applying negative voltage to a plate electrode when turning on a power diode, an inversion layer is formed in a front surface layer of an n drift region sandwiched between a p guard ring region and a p anode region, and the p guard ring region and p anode region are connected by the inversion layer, thereby causing one portion or all of the p guard ring region to function as an active region together with the anode region, and expanding an energization region, thus lowering on-voltage. |
| 主权项 |
1. A semiconductor device, comprising:
a second conductivity type first semiconductor region that is disposed in a front surface layer of a first conductivity type semiconductor substrate; a second conductivity type guard ring region that is a breakdown voltage structure disposed surrounding the first semiconductor region; an insulating film that extends from the end portion of the first semiconductor region to the guard ring region; a conductive film that is disposed on the semiconductor substrate sandwiched between the end portion of the first semiconductor region and the end portion of the guard ring region, and on the guard ring region, via the insulating film; and a main electrode, disposed on the first semiconductor region, which is spaced away from the conductive film. |
