| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and a manufacturing method of the same, which can inhibit increase in resistance value in a region of an oxide semiconductor even by a heat treatment in a manufacturing process of a thin film transistor, and which can inhibit decrease in drain current and characteristic variation of the thin film transistor.SOLUTION: A thin film transistor comprises a plurality of layers including at least a gate electrode film 2 and an oxide semiconductor layer (IGZO film 4) which are stacked on a substrate 1, in which a part of the oxide semiconductor layer (4) is formed to be an amorphous channel region, and at least a part of a region of the oxide semiconductor layer (4) other than the channel region is formed to be a low-resistant region (4'), and at least a part of the low-resistant region (4') is crystallized. |
