发明名称 Ag ALLOY SPUTTERING TARGET
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem that, in an Ag alloy film which is a reflective electrode film used as an anode of organic EL, low resistance and high reflectance are required, and smallness of surface roughness is also required; and to provide an Ag-In alloy sputtering target in which generation of abnormal discharge or splash is reduced during sputtering for forming a reflective electrode film by the Ag-In alloy.SOLUTION: An Ag-In alloy sputtering target contains In: 0.1-1.5 atom%, and the remainder has a component composition comprising Ag and inevitable impurities, and each content of elements: Si, Cr, Fe and Ni is 30 ppm or less, and further the total content is 90 ppm or less. Sb is contained as much 0.2-2.0 atom%.</p>
申请公布号 JP2014139339(A) 申请公布日期 2014.07.31
申请号 JP20130221977 申请日期 2013.10.25
申请人 MITSUBISHI MATERIALS CORP 发明人 NONAKA SOHEI ; KOMIYAMA SHOZO
分类号 C23C14/34;H01L51/50;H05B33/10;H05B33/24;H05B33/26 主分类号 C23C14/34
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