| 发明名称 |
Charged Particle Lithography System With a Long Shape Illumination Beam |
| 摘要 |
A system includes an integrated circuit (IC) design data base having a feature, a source configured to generate a radiation beam, a pattern generator (PG) including a mirror array plate and an electrode plate disposed over the mirror array plate, wherein the electrode plate includes a lens let having a first dimension and a second dimension perpendicular to the first dimension with the first dimension larger than the second dimension so that the lens let modifies the radiation beam to form the long shaped radiation beam, and a stage configured secured the substrate. The system further includes an electric field generator connecting the minor array plate. The mirror array plate includes a mirror. The mirror absorbs or reflects the radiation beam. The radiation beam includes electron beam or ion beam. The second dimension is equal to a minimum dimension of the feature. |
| 申请公布号 |
US2014212815(A1) |
申请公布日期 |
2014.07.31 |
| 申请号 |
US201313756178 |
申请日期 |
2013.01.31 |
| 申请人 |
Company, Ltd. Taiwan Semiconductor Manufacturing |
发明人 |
Hsiao Jimmy;Kuo Ming-Zhang;Yang Ping-Lin;Lin Cheng-Chung;Takahashi Osamu;Dhong Sang Hoo |
| 分类号 |
H01J29/60;H01J29/62 |
主分类号 |
H01J29/60 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An exposure system comprising:
a source configured to generate a radiation beam; and a pattern generator (PG) including a mirror array plate and an electrode plate disposed over the mirror array plate, wherein the electrode plate includes a lens let having a first dimension and a second dimension perpendicular to the first dimension with the first dimension being larger than the second dimension so that the lens let modifies the radiation beam to form a long shaped radiation beam. |
| 地址 |
US |
