| 摘要 |
The present invention relates to an eDRAM memory element comprising a first storage node (1120, 1220), a bitline node (1040) for accessing the value stored in the storage node, and a select transistor (1130, 1230), controlling access from the bitline node to the storage node, wherein the select transistor has a front gate (1132, 1232) and a back gate (4510, 4511). |
