| 摘要 |
<p>Wellbore devices for use in filtration, wellbore isolation, production control, lifecycle management and wellbore construction may include at least a first and a second shape-memory material each having an altered geometric position and each an original geometric position. Each shape-memory material may be held in the altered geometric run-in position at a temperature below glass transition temperature (Tg), where the Tgs and/or the respective slope changes of the first and second shape-memory materials are different. Option¬ ally the shape-memory materials may be crosslinked polymers where the crosslinked polymers have different crosslinking ratios from one another. Once the wellbore device is in place downhole and the first and second shape- memory materials are subjected to temperatures above their Tgs, the materials will deploy to recovered geometric positions at or near their original geometric positions to perform their filtration, isolation, control or other function. These deployments may occur at different times or rates.</p> |
