发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To improve operation characteristics and reliability of a semiconductor device by forming structures of transistors arranged in various circuits to be appropriate for functions of the circuits; and achieve reduction in manufacturing cost and improvement in yield by achieving low power consumption and decreasing the number of processes.SOLUTION: A semiconductor device comprises: a transistor having an LDD (Lightly Doped Drain) region; and a gate electrode which has a tapered part and provided for forming the LDD region, in which an ionized N or P-type impurity element which is accelerated by electric fields to pass the gate electrode and a gate insulation film and added to a semiconductor layer.</p> |
申请公布号 |
JP2014140055(A) |
申请公布日期 |
2014.07.31 |
申请号 |
JP20140037792 |
申请日期 |
2014.02.28 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;ARAI YASUYUKI |
分类号 |
H01L29/786;G02F1/1362;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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