| 发明名称 |
BORON-DOPED CARBON-BASED HARDMASK ETCH PROCESSING |
| 摘要 |
Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6. |
| 申请公布号 |
US2014213059(A1) |
申请公布日期 |
2014.07.31 |
| 申请号 |
US201414168350 |
申请日期 |
2014.01.30 |
| 申请人 |
Doan Kenny Linh;Kim Jong Mun;Shimizu Daisuke |
发明人 |
Doan Kenny Linh;Kim Jong Mun;Shimizu Daisuke |
| 分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of patterning a film, the method comprising:
etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source selected from the group consisting of CF4, SF6 and C2F6. |
| 地址 |
San Jose CA US |
