发明名称 |
PROCESS FOR PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD AND PROCESS FOR PROCESSING SILICON SUBSTRATE |
摘要 |
A process for producing a substrate for a liquid ejection head in which a depressed portion is formed on a second surface that is a surface opposite to a first surface of a silicon substrate having an element formation region on the first surface with a peripheral side region left, the process including the steps of (1) forming an etching mask layer covering the second surface of the silicon substrate; (2) subjecting the etching mask layer and the silicon substrate to laser abrasion processing to form a pattern opening that does not pass through the silicon substrate; and (3) performing a wet etching process to the silicon substrate where the pattern opening is formed from a side of the second surface to form the depressed portion. The depressed portion is formed over a center side region including a position corresponding to the element formation region. |
申请公布号 |
US2014212997(A1) |
申请公布日期 |
2014.07.31 |
申请号 |
US201414150181 |
申请日期 |
2014.01.08 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Yaginuma Seiichiro;Shimoyama Hiroyuki;Ohsumi Masaki;Yonemoto Taichi;Koyama Shuji |
分类号 |
B41J2/16 |
主分类号 |
B41J2/16 |
代理机构 |
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代理人 |
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主权项 |
1. A process for producing a substrate for a liquid ejection head in which a depressed portion is formed on a second surface that is a surface opposite to a first surface of a silicon substrate having an element formation region on the first surface with a peripheral side region left, the process comprising the steps of:
(1) forming an etching mask layer covering the second surface of the silicon substrate; (2) subjecting the etching mask layer and the silicon substrate to laser abrasion processing to form a pattern opening that does not pass through the silicon substrate; and (3) performing a wet etching process to the silicon substrate where the pattern opening is formed from a side of the second surface to form the depressed portion, wherein the depressed portion is formed over a center side region including a position corresponding to the element formation region. |
地址 |
Tokyo JP |