发明名称 PROCESS FOR PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD AND PROCESS FOR PROCESSING SILICON SUBSTRATE
摘要 A process for producing a substrate for a liquid ejection head in which a depressed portion is formed on a second surface that is a surface opposite to a first surface of a silicon substrate having an element formation region on the first surface with a peripheral side region left, the process including the steps of (1) forming an etching mask layer covering the second surface of the silicon substrate; (2) subjecting the etching mask layer and the silicon substrate to laser abrasion processing to form a pattern opening that does not pass through the silicon substrate; and (3) performing a wet etching process to the silicon substrate where the pattern opening is formed from a side of the second surface to form the depressed portion. The depressed portion is formed over a center side region including a position corresponding to the element formation region.
申请公布号 US2014212997(A1) 申请公布日期 2014.07.31
申请号 US201414150181 申请日期 2014.01.08
申请人 CANON KABUSHIKI KAISHA 发明人 Yaginuma Seiichiro;Shimoyama Hiroyuki;Ohsumi Masaki;Yonemoto Taichi;Koyama Shuji
分类号 B41J2/16 主分类号 B41J2/16
代理机构 代理人
主权项 1. A process for producing a substrate for a liquid ejection head in which a depressed portion is formed on a second surface that is a surface opposite to a first surface of a silicon substrate having an element formation region on the first surface with a peripheral side region left, the process comprising the steps of: (1) forming an etching mask layer covering the second surface of the silicon substrate; (2) subjecting the etching mask layer and the silicon substrate to laser abrasion processing to form a pattern opening that does not pass through the silicon substrate; and (3) performing a wet etching process to the silicon substrate where the pattern opening is formed from a side of the second surface to form the depressed portion, wherein the depressed portion is formed over a center side region including a position corresponding to the element formation region.
地址 Tokyo JP