GAS SUPPLY DEVICE, PROCESSING APPARATUS, PROCESSING METHOD, AND STORAGE MEDIUM

摘要

A gas supply device 3 includes a device body 31 forming a substantially conical gas-conducting space 32 for conducting gases therethrough from a diametrally reduced end 32a of the space 32 to a diametrally enlarged end 32b thereof, gas introduction ports 61a to 63a, 61b to 63b, and 64, each provided near the diametrally reduced end 32a of the gas-conducting space 32 in the device body 31 to introduce the gases into the gas-conducting space 32, and a plurality of partitioning members 41 to 46 provided in the gas-conducting space 32 of the device body 31 to partition the gas-conducting space 32 concentrically. The partitioning members 42 to 46 arranged adjacently to each other at a radially outer side of the gas-conducting space 32 are greater than the adjacently arranged partitioning members 41 to 45 at a radially inner side in dimensionally diverging rate per partitioning member. Thus, internal gas flow channels of the gas supply device have high gas conductance and enhanced gas replaceability, compared with those of the conventional gas showerhead.

主权项

1. A gas supply device disposed oppositely to a substrate in a process chamber and adapted to supply process gases to the substrate so as to process the substrate, the device comprising:
a device body having a gas-conducting space therein, the gas-conducting space having a diametrally reduced end and a diametrally enlarged end and being formed into a substantially conical shape to thereby conduct the gases from the diametrally reduced end through the gas-conducting space to the diametrally enlarged end; gas introduction ports provided near the diametrally reduced end of the gas-conducting space in the device body to introduce the gases into the gas-conducting space; and a plurality of partitioning members provided in the gas-conducting space of the device body to partition the gas-conducting space concentrically; wherein the partitioning members arranged adjacently to each other at a radially outer side of the gas-conducting space are greater than those of a radially inner side in dimensionally diverging rate per partitioning member.