PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE AND PHOTONIC CRYSTAL MANUFACTURING METHOD

摘要

The present invention is aimed at providing a plasma etching method capable of oblique etching with a high aspect ratio and high uniformity. In the plasma etching method according to the present invention, a base body S is etched with a high aspect ratio by the following process: An electric-field control device 11 having an ion-introducing orifice 12 penetrating therethrough in a direction inclined from the normal to the surface of a base body S is placed on or above the surface of this base body S. Plasma P is generated on the surface of the base body S on or above which the electric-field control device 11 is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.