(Al,Ga,In)N diode laser fabricated at reduced temperature

摘要

A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

主权项

1. A method of fabricating an (Al,Ga,In)N laser diode, comprising
fabricating an indium containing laser core; and fabricating subsequent layers on or above the laser core that function at least as a waveguide or cladding layer; wherein the subsequent layers fabricated on or above the laser core comprise a crystalline, polycrystalline or amorphous transparent conducting oxide grown or deposited on or above the laser core; and wherein the indium containing laser core is fabricated at a first temperature, and the subsequent lavers are grown or deposited on or above the laser core at or below a second temperature that is lower than the first temperature, to inhibit degradation of the laser core.