Methods of forming copper-based conductive structures on semiconductor devices

摘要

Disclosed herein are various methods of forming copper-based conductive structures on semiconductor devices, such as transistors. In one example, the method involves performing a first etching process through a patterned metal hard mask layer to define an opening in a layer of insulating material, performing a second etching process through the opening in the layer of insulating material that exposes a portion of an underlying copper-containing structure, performing a wet etching process to remove the patterned metal hard mask layer, performing a selective metal deposition process through the opening in the layer of insulating material to selectively form a metal region on the copper-containing structure and, after forming the metal region, forming a copper-containing structure in the opening above the metal region.

主权项

1. A method, comprising:
performing a first etching process through a patterned metal hard mask layer to define an opening in a layer of insulating material; performing a second etching process through said opening in said layer of insulating material to thereby expose a portion of an underlying copper-containing structure; after performing the second etching process, performing a wet etching process to remove said patterned metal hard mask layer; performing a selective metal deposition process through said opening in said layer of insulating material to selectively form a metal region on said copper-containing structure; and after forming said metal region, forming a copper-containing structure in said opening in said layer of insulating material above said metal region.