发明名称 Vertical integrated circuit switches, design structure and methods of fabricating same
摘要 Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void.
申请公布号 US8791778(B2) 申请公布日期 2014.07.29
申请号 US201314027768 申请日期 2013.09.16
申请人 International Business Machines Corporation 发明人 Anderson Felix P.;Cooney, III Edward C.;McDevitt Thomas L.;Stamper Anthony K.
分类号 H01H51/22 主分类号 H01H51/22
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A MEMS switch, comprising: at least two vertically extending metal wires formed in a wafer; and a void formed in the wafer which accommodates at least one of the at least two vertically extending metal wires, wherein the at least one of the at least two vertically extending metal wires is moveable within the void upon an application of a voltage, and the at least two vertically extending metal wires are four wires and the at least one wire is two inner wires which are moveable within the void upon an application of the voltage.
地址 Armonk NY US