Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate

摘要

A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.

主权项

1. A method for chemical mechanical polishing of a surface having at least one feature thereon comprising tungsten and at least one feature thereon comprising a dielectric material, said method comprising the steps of:
a. placing a substrate having the surface in contact with a polishing pad; b. delivering a polishing composition comprising:
an abrasive;periodic acid; andan amino alcohol compound; and c. polishing the substrate with the polishing composition wherein said periodic acid and said abrasive are present in a combined amount sufficient to render the substrate surface substantially planar and to maintain a removal rate of tungsten of at least 800 Angstroms per minute upon chemical-mechanical polishing thereof when polishing is done at 4 psi of down force ; and a tunable tungsten/dielectric selectivity ranging from 0.5 to 1.5 is realized upon chemical-mechanical polishing the substrate using the composition.