发明名称 Method for producing a plurality of radiation-emitting components and radiation-emitting component
摘要 A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer to the radiation-emitting device and the separating regions; E) severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer in a first separating step; and F) partially severing the interlayer and severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.
申请公布号 US8790939(B2) 申请公布日期 2014.07.29
申请号 US200912918364 申请日期 2009.02.19
申请人 OSRAM Opto Semiconductors GmbH 发明人 Preuss Stephan;Jaeger Harald
分类号 H01L33/52 主分类号 H01L33/52
代理机构 DLA Piper LLP (US) 代理人 DLA Piper LLP (US)
主权项 1. A method for producing a plurality of radiation-emitting components comprising: A) providing a carrier layer comprising ceramic material and having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer comprising a photoresist layer or a solder-resist layer to the separating regions and directly to the carrier layer; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer having a hardness between hardnesses of the carrier layer and the interlayer to the radiation-emitting device and the separating regions such that 1) in the separating regions said interlayer is located between the carrier layer and the potting layer and 2) the potting layer is in direct contact with the radiation-emitting device; E) completely severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer, which is free of through-holes, in a first separating step; and F) partially severing the interlayer and completely severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.
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