Wafer backside interconnect structure connected to TSVs

摘要

An integrated circuit structure includes a semiconductor substrate having a front surface and a back surface; a conductive via passing through the semiconductor substrate; and a metal feature on the back surface of the semiconductor substrate. The metal feature includes a metal pad overlying and contacting the conductive via, and a metal line over the conductive via. The metal line includes a dual damascene structure. The integrated circuit structure further includes a bump overlying the metal line.

主权项

1. An integrated circuit structure comprising:
a semiconductor substrate having an active semiconductor device formed on a first side of the semiconductor substrate; a conductive via passing through the semiconductor substrate; a metal feature on a second side of the semiconductor substrate opposing the first side of the semiconductor substrate, the metal feature comprising:
a metal pad overlying and contacting the conductive via, wherein from a top-down perspective, all horizontal dimensions of the metal pad are greater than respective horizontal dimensions of the conductive via; anda metal line higher than the conductive via, relative the second side of the semiconductor substrate, wherein the metal line comprises a dual damascene structure; and a bump overlying the metal line.