Multiple gate transistor having homogenously silicided fin end portions

摘要

In a multiple gate transistor, the plurality of Fins of the drain or source of the transistor are electrically connected to each other by means of a common contact element, wherein enhanced uniformity of the corresponding contact regions may be accomplished by an enhanced silicidation process sequence. For this purpose, the Fins may be embedded into a dielectric material in which an appropriate contact opening may be formed to expose end faces of the Fins, which may then act as silicidation surface areas.

主权项

1. A method, comprising:
forming a gate electrode structure of a multiple gate transistor above a plurality of fins, wherein said gate electrode structure comprises a gate electrode material, and wherein end portions of each of said plurality of fins extend laterally from said gate electrode structure; forming a dielectric material above said gate electrode structure and above at least said end portions of said plurality of fins; forming an opening in said dielectric material so as to extend through and expose a cross-sectional area of each of said end portions; after forming said opening, forming a contact region in said exposed cross-sectional area of each of said end portions exposed in said opening; forming a contact element in said opening, said contact element connecting to each of said contact regions; and prior to forming said contact regions, removing a portion of said dielectric material so as to expose a portion of said gate electrode material.