发明名称 |
Through silicon via wafer, contacts and design structures |
摘要 |
Disclosed herein are through silicon vias (TSVs) and contacts formed on a semiconductor material, methods of manufacturing, and design structures. The method includes forming a contact hole in a dielectric material formed on a substrate. The method further includes forming a via in the substrate and through the dielectric material. The method further includes lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the via formed in the substrate. The method further includes filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via. |
申请公布号 |
US8791016(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201213626025 |
申请日期 |
2012.09.25 |
申请人 |
International Business Machines Corporation |
发明人 |
Gambino Jeffrey P.;Luce Cameron E.;Vanslette Daniel S.;Webb Bucknell C. |
分类号 |
H01L23/48;H01L21/768;H01L21/70 |
主分类号 |
H01L23/48 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Canale Anthony;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A method comprising:
forming a contact hole in a dielectric material formed on a substrate; forming a via in the substrate and through the dielectric material; lining the contact hole and the dielectric material with a metal liner using a deposition technique that will avoid formation of the liner in the via formed in the substrate; and filling the contact hole and the via with a metal such that the metal is formed on the liner in the contact hole and directly on the substrate in the via. |
地址 |
Armonk NY US |