Semiconductor device

摘要

Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer.

主权项

1. A semiconductor device comprising:
a substrate; a driver circuit portion over the substrate, the driver circuit portion including a driver circuit transistor; a pixel portion over the substrate, the pixel portion including a pixel transistor; a first counter electrode layer over the pixel portion with a liquid crystal layer interposed between the pixel portion and the first counter electrode layer; and a second counter electrode layer over the driver circuit portion with the liquid crystal layer interposed between the driver circuit portion and the second counter electrode layer, wherein the second counter electrode layer includes a branching comb-like shape, and wherein the second counter electrode layer overlaps with the driver circuit transistor.