发明名称 |
Chemical mechanical polishing apparatus |
摘要 |
A chemical mechanical polishing apparatus includes a platen having a first region configured to support a wafer, and a second region disposed outside the first region. The chemical mechanical polishing apparatus further includes a polishing pad disposed on the platen, a pad head to which the polishing pad is attached, a slurry supply configured to supply a slurry onto the wafer, and an injection port disposing on the second region of the platen. The injection port is configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer. |
申请公布号 |
US8790158(B2) |
申请公布日期 |
2014.07.29 |
申请号 |
US201113033876 |
申请日期 |
2011.02.24 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Chang One-Moon;Boo Jae-Phil;Kim Jong-Bok;Tak Soo-Young;Ahn Jong-Sun;Kim Shin |
分类号 |
B24B49/03;B24B49/12;B24B37/04 |
主分类号 |
B24B49/03 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A chemical mechanical polishing apparatus, comprising:
a platen having a first region configured to support a wafer and a second region disposed outside the first region; a polishing pad locatable on the platen; a pad head to which the polishing pad is attached; a slurry supply configured to supply a slurry onto the wafer; and an injection port disposed at the second region of the platen, and configured to inject a predetermined gas to an edge of a bottom surface of the wafer and toward the outside of the wafer, wherein the injection port has a closed loop shape extending along an outer circumference of the first region of the platen. |
地址 |
Suwon-si, Gyeonggi-do KR |