| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a GeOI wafer which has a Ge layer having a uniform in-plane film thickness and less surface roughness and less crystal defect.SOLUTION: A GeOI wafer manufacturing method comprises: epitaxial growing a Ge layer on a surface of an SOI layer of an SOI wafer in which a BOX layer and the SOI layer are sequentially formed on a silicon single crystal wafer; forming an ion implantation layer inside the silicon single crystal wafer by implanting hydrogen ions through the Ge layer; bonding a surface of the Ge layer and a surface of a handle wafer via an insulation film and subsequently performing separation at the ion implantation layer to manufacture a bonded wafer in which an insulation film, the Ge layer, the SOI layer, the BOX layer and a part of the silicon single crystal wafer are sequentially laminated on the handle wafer; sequentially removing the part of the silicon single crystal wafer, the BOX layer and the SOI layer to expose the Ge layer thereby to manufacture a GeOI wafer in which the insulation film and the Ge layer are sequentially laminated on the handle wafer. |
