AGENCEMENT POUR DISPOSITIF SUPERCONDENSATEUR, DISPOSITIF SUPERCONDENSATEUR COMPRENANT L'AGENCEMENT, PROCEDE DE FABRICATION D'UN AGENCEMENT

摘要

The arrangement has a separator element (3) fixed against a face (4a) of an electrically conductive element (4). A set of through holes (5) passes through the electrically conductive element and the separator element, where the holed separator element forms an electrically insulating membrane that is porous to ions of an electrolyte of a supercapacitor device. Equivalent surface area of electrodes (1) of the supercapacitor device is dependent on number of the holes made and holes depth in the electrically conductive element of the electrodes being perforated. The electrodes are cathode and anode electrodes. The separator element is made of dielectric layer oxide with thickness greater than 1 nanometer. The electrodes are formed of semiconductor material e.g. silicon, germanium, silicon/germanium alloy, gallium arsenide/nitride and indium phosphide, and metal e.g. stainless steel, nickel, aluminum and copper. Independent claims are also included for the following: (1) a method for fabricating an arrangement for a supercapacitor device (2) a supercapacitor device.