发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
摘要 Provided is a substrate processing apparatus including a reaction chamber configured to heat a substrate; a transfer chamber configured to transfer the heated substrate; a refrigerant flow path installed in the reaction chamber; a refrigerant flow path installed in the reaction chamber; a refrigerant supply unit installed in the refrigerant flow path; a refrigerant exhaust unit installed in the refrigerant flow path; a transfer chamber refrigerant supply unit installed in the transfer chamber; a transfer chamber refrigerant exhaust unit installed in the transfer chamber; a heat exchanger connected to the refrigerant exhaust pipe and the transfer chamber refrigerant exhaust unit; a turbine connected to the heat exchanger; a generator connected to the turbine; and a control unit configured to control the refrigerant supply unit and the transfer chamber refrigerant supply unit.
申请公布号 US2014206204(A1) 申请公布日期 2014.07.24
申请号 US201414226031 申请日期 2014.03.26
申请人 Hitachi Kokusai Electric Inc. 发明人 NAKAGAWA Hitoshi
分类号 H01L21/67;F22B1/18;H01L21/324 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing apparatus comprising: a reaction chamber where a substrate is heated; a transfer chamber configured to accommodate the substrate heated in the reaction chamber; a refrigerant flow path installed at the reaction chamber; a reaction chamber refrigerant supply unit configured to supply a first refrigerant into the refrigerant flow path; a reaction chamber refrigerant exhaust unit configured to exhaust the first refrigerant from the refrigerant flow path; a transfer chamber refrigerant supply unit installed in the transfer chamber; a transfer chamber refrigerant exhaust unit installed in the transfer chamber; a heat exchanger connected to the reaction chamber refrigerant exhaust unit and the transfer chamber refrigerant exhaust unit; a turbine connected to the heat exchanger; a generator connected to the turbine; and a control unit configured to control the reaction chamber refrigerant supply unit and the transfer chamber refrigerant supply unit.
地址 Tokyo JP